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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 0.25 10.5 300 MAX. 1050 1050 400 5 10 100 1.5 UNIT V V V A A W V ns
Tmb 25 C IC = 3 A; IB = 1 A IC = 3 A; VCE = 1.5 V IC=2.5 A,IB1=0.5 A
PINNING - TO220AB
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1050 400 1050 5 10 2 4 100 150 150 UNIT V V V A A A A W C C
Tmb 25 C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 60 MAX. 1.25 UNIT K/W K/W
March 2002
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL ICES,ICBO ICES ICEO IEBO VCEOsust VCEsat VBEsat hFE hFEsat PARAMETER Collector cut-off current
1
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VCEO = VCEOMmax(400V) VEB = 9 V; IC = 0 A IC = 300 mA; L = 25 mH IC = 3 A; IB = 1 A IC = 1 A; IB = 0.2 A IC = 3 A; IB = 1 A IC = 10 mA; VCE = 5 V IC = 800 mA; VCE = 3 V IC = 3 A; VCE = 1.5 V
MIN. 400 10 23 -
TYP. 0.25 1.0 31 10.5
MAX. 1.0 2.0 0.1 0.1 1.5 0.5 1.5 40 -
UNIT mA mA mA mA V V V V
Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon = 2.5 A; IBon = 0.5 A IBoff = -1 A; VCC = 250 V; TYP. MAX. UNIT s s s s ns
1 2.5 0.3
-
ICon = 2.5 A; IBon = 0.5 A; -VBB = 5 V; LC = 300 H; LB = 1 H; VCC = 350 V
2 200
-
ICon = 2.5 A; IBon = 0.5 A; -VBB = 5 V; LC = 300 H; LB = 1 H; VCC = 350 V; Tj = 100 C
3 300
-
s ns
1 Measured with half sine-wave voltage (curve tracer).
March 2002
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
100-200R + VB 25 mH + 50v
IC
90 %
ICon
90 %
10 % ts ton tf IBon 10 %
Pulse in 50R Oscilloscope Horizontal Oscilloscope Vertical C.T.
IB
toff
tr
30ns -IBoff
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
LC
400 300
IBon
LB T.U.T.
-VBB
0 VCE / V min VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Test circuit inductive load. VCC = 350 V; -VBE = 5 V; LC = 300 uH; LB = 1 uH
VCC
ICon 90 %
IC
RL VIM 0 tp
IB
RB T.U.T.
ts toff IBon
10 % tf t
T
-IBoff
t
Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements.
Fig.6. Switching times waveforms with inductive load.
March 2002
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
VBEsat (V)
0
20
40
60
80 100 Tmb / C
120
140
0.1
1.0
IC (A)
10.0
Fig.7. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
Fig.10. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.
100 hFE
0.5 VCEsat (V)
VCE = 5 V 10 VCE = 1 V
0.4
0.3
0.2
0.1
1 0.01 0.1 1 IC (A) 10
0 0.1 1.0 IC (A) 10.0
Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE
2 VCEsat (V)
Fig.11. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.
Zth / (K/W)
10
IC = 1 A 2 A 3 A
4A
1 D= 0.5
1
0.1
0.2 0.1 0.05 0.02 0
P D
tp
D=
tp
T t
T
0 0.01
0.1
1
10 IB (A)
0.01 1E-06
1E-04
1E-02 t/s
1E+00
Fig.9. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj = 25C.
Fig.12. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
March 2002
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
VCC
102
IC (A)
LC VCL(RBSOAR) IBon PROBE POINT LB
10
Duty cycle = 0.01
ICM max IC max
tp=
II
-VBB T.U.T.
1
10us
(1)
100us
Fig.13. Test Circuit for reverse bias safe operating area. Vcl 1000V; Vcc = 150V; VBB = -5V; LB = 1H; Lc = 200H
10-1
(2)
1ms
I
III
10ms DC
12 IC (A) 10 8 6 4 2 0 0 200 400 600 800 1200 1000 VCLAMP (V)
10-2 1 10 102 103
VCE (V)
Fig.15. Forward bias safe operating area. Ths 25 C (1) (2) I II III NB: Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE 100 and tp 0.6 s. Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.
Fig.14. Reverse bias safe operating area Tj Tjmax
March 2002
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.16. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
March 2002
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 2002
7
Rev 1.000

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