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| SamHop Microelectronics Corp. STS2321 Oct .29 2004 V1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -20V FEATURES ( m W ) Max ID -3.2A RDS(ON) Super high dense cell design for low RDS(ON). 65 @ VGS = -4.5V 90 @ VGS =-2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit -20 10 -3.2 -11 -1.25 1.25 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RthJA 100 C/W 1 STS2321 ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS c Symbol Condition VGS = 0V, ID = -250uA VDS = -16V, VGS= 0V VGS = 10V, VDS = 0V VDS = VGS, ID =-250uA VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -2.0A VDS = -5V, VGS = -4.5V VDS = -5V, ID = -3.2A Min Typ C Max Unit -20 1 100 -0.6 -0.9 -1.5 50 75 8 8 610 155 105 13.9 7.1 75.2 54 7.4 1.2 2.8 65 90 V uA nA V m-ohm m-ohm ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHARACTERISTICS c Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = -10V, ID = -1A, VGS = -4.5V, RL = 10 ohm RGEN = 6 ohm VDS = -10V, ID = -3.2A, VGS = -4.5V ns ns ns ns nC nC nC 2 STS2321 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =-1.25A Min Typ Max Unit -0.78 -1.2 V C DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 -VGS=3V 25 20 -I D, Drain Current(A) -ID, Drain Current (A) 16 -VGS=10,9,8,7,6,5,4V -55 C 15 25 C 10 Tj=125 C 5 0 0.0 12 8 4 0 -VGS=2V 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1.0 1.2 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 2.2 1000 1.8 Figure 2. Transfer Characteristics VGS=-4.5V ID=-3.2A C, Capacitance (pF) RDS(ON), On-Resistance 25 30 800 600 400 200 Crss 0 0 5 10 15 20 Coss Ciss (Normalized) 1.4 1.0 0.6 0.2 0 -50 -25 0 25 50 75 100 125 Tj( C) -VDS, Drain-to Source Voltage (V) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 3 STS2321 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 VDS=VGS ID=-250uA 1.10 ID=-250uA 1.07 1.04 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) with Temperature 12 Figure 6. Breakdown Voltage Variation with Temperature 20 gFS, Transconductance (S) 8 6 4 2 0 VDS=-5V 0 5 10 15 20 25 -Is, Source-drain current (A) 10 10 1 0 0.4 0.6 0.8 1.0 TJ=25 C 1.2 1.4 -IDS, Drain-Source Current (A) -VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current -VGS, Gate to Source Voltage (V) Figure 8. Body Diode Forward Voltage Variation with Source Current 13 -ID, Drain Current (A) 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 Qg, Total Gate Charge (nC) VDS=-10V ID=-3.2A 10 R DS ( ) ON Lim it 10 0m 10 s ms 1s DC 11 0.1 0.03 VGS=-4.5V Single Pulse Tc=25 C 0.1 1 10 20 50 -VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area 4 STS2321 VDD t on toff tr 90% 5 VGS RGEN V IN D G RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 10 Normalized Transient Thermal Resistance 1 0.5 0.2 PDM t1 on 0.1 0.1 0.05 0.02 0.01 t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 1. RthJA (t)=r (t) * RthJA 2. RthJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 STS2321 A L G F M J B C I H E D (TYP .) 2.70 2.40 1.40 0.35 0 3.10 2.80 1.60 0.50 0.10 0.55 1.30 0.20 1.15 10X 0.106 0.094 0.055 0.014 0 0.122 0.110 0.063 0.020 0.004 F G 0.45 1.90 REF. 1.00 0.10 0.40 0.45 0X 0.022 0.018 0.075 REF. 0.039 0.004 0.016 0.033 0X 0.051 0.008 0.045 10X I J L M 6 STS2321 SOT-23 Tape and Reel Data SOT-23 Carrier Tape UNIT:P PACKAGE SOT-23 A0 3.20 O0.10 B0 3.00 O0.10 K0 D0 D1 i1.50 +0.10 E 8.00 +0.30 -0.10 E1 1.75 O0.10 E2 3.50 O0.05 P0 4.00 O0.10 P1 4.00 O0.10 P2 2.00 O0.05 T 0.20 O0.02 i1.00 1.33 O0.10 +0.25 SOT-23 Reel UNIT:P TAPE SIZE 8P REEL SIZE i178 M i178 O1 N i60 O1 W 9.00 O0.5 W1 12.00 O0.5 H i13.5 O0.5 K 10.5 S G R 5.00 V 18.00 2.00 i10.0 O0.5 7 |
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