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| Datasheet File OCR Text: |
| ALN64535 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ALN64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE: * NF = 1.6 dB Typical @ 2 GHz *S212 = 11 dB Typical @ 2 GHz * Hermetic Ceramic Package PACKAGE STYLE SS35 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC O O 60 mA 25 V 12 V 1.5 V 300 mW @ TA 75 C O O O -65 C to +200 C -65 C to +150 C 85 C/W TC = 25 C O O 1 = Base 2 & 4 = Emitter 3 = Collector CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB ft S21 NF GA 2 TEST CONDITIONS VCB = 8 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 10 V VCE = 8 V VCE = 8 V IC = 20 mA IC = 20 mA IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 mA MINIMUM TYPICAL MAXIMUM 100 1.0 50 250 0.6 8.0 10 10 8.5 11 1.6 11 2.5 UNITS nA A --pF GHz dB dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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