View SI4450DY_288307.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SI4450DY
January 2001
SI4450DY
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features *
8 A, 60 V. RDS(on) = 0.020 @ VGS = 10 V RDS(on) = 0.025 @ VGS = 6 V.
* * * *
Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications * * *
DC/DC converter Load switch Motor drives
D D
D
D
5 6 7
4 3 2 1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25C unless otherwise noted
Parameter
Ratings
60 20
(Note 1a)
Units
V V A W
8 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
C/W C/W
Package Outlines and Ordering Information
Device Marking
4450
Device
SI4450DY
Reel Size
13''
Tape Width
12mm
Quantity
2500 units
2001 Fairchild Semiconductor International
SI4450DY Rev. A
SI4450DY
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
Min
60
Typ Max Units
V 27 1 100 -100 mV/C A nA nA
Off Characteristics
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS VGS VGS VGS = 10 V, ID = 8 A = 10 V, ID = 8 A, TJ = 125C = 6 V, ID = 7.5 A = 10 V, VDS = 5 V
2
2.5 -4.5 0.017 0.027 0.019
4
V mV/C
0.020 0.032 0.025
ID(on) gFS
25 28
A mS
VDS = 5 V, ID = 8 A
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, VGS = 0 V f = 1.0 MHz
1850 290 100
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6
13 8 16 32
24 16 26 50 42
ns ns ns ns nC nC nC
VDS = 15 V, ID = 8 A VGS = 10 V,
30 8.5 5.5
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
(Note 2)
2.1 0.74 1.2
A V
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50 C/W when mounted on a 0.5 in2 pad of 2 oz. copper.
b) 105 C/W when mounted on a 0.02 in2 pad of 2 oz. copper.
c) 125 C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
SI4450DY Rev A
SI4450DY
Typical Characteristics
50
2.4
6.0V 5.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS =10V 7.0V
2.1 1.8 1.5 1.2 0.9 0.6 VGS=4.0V
ID, DRAIN CURRENT (A)
40
4.5V 30
4.5 5.0V 6.0V 7.0V
20 4.0 10
0 0 0.5 1 1.5 2 2.5 3
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.06
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID =8.0A VGS =10V
RDS(ON), ON RESISTANCE ( )
ID = 4.0A 0.05
1.4
1.2
0.04
1
0.03 TJ = 125 C 0.02 25 C
o o
0.8
0.6 -50 -25 0 25 50 75 100
o
0.01
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature
50
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 -IS, REVERSE DRAIN CURRENT (A)
VDS = 5V ID, DRAIN CURRENT (A) 40
VGS =0V 10 TJ =125 C 25 C 0.1 -55 C
o o o
30 TJ = -55 C 20 25 C 10 125 C 0 2 2.5 3 3.5 4 4.5 5
o o o
1
0.01
0.001 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
SI4450DY Rev A
SI4450DY
Typical Characteristics (continued)
10 VGS, GATE-SOURCE VOLTAGE (V) ID=8.0A 8 VDS= 12V 24V 6 48V
2500
2000 CAPACITANCE (pF) Ciss 1500
4
1000
2
500 Coss Crss 0 6 12 18 24 30
0 0 7 14 21 28 35
0
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100 RDS(ON) Limit ID, DRAIN CURRENT (A) 10 100s
50 SINGLE PULSE 40 POWER (W)
1ms 10ms 100ms 1s 10s DC
RJA=125 C/W T =25 C
o
o
30
1
20
0.1
10
0.01 0.1 1 10 100
0 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10
D = 0.5 0.2 0.1 0.05 P(pk) 0.02 0.01 Single Pulse r(t), NORMALIZED EFFECTIVE
R JA (t) = r(t) * R JA R JA = 125C/W
t1
t2
TJ - TA = P * RJA (t) Duty Cycle, D = t1 /t2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal Characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
SI4450DY Rev A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

▲Up To Search▲

Price & Availability of SI4450DY

	To Download SI4450DY Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .