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Power Transistors
2SD2220
Silicon NPN triple diffusion planar type Darlington
For low-frequency amplification
7.50.2
Unit: mm
4.50.2
10.80.2
s Features
q
3.80.2
90 0.650.1 0.850.1
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25C)
Ratings 100 80 5 1.5 1 1.5 150 -55 to +150 Unit V V V A A W C C
B
1 2 3 2.50.2 0.8C
16.01.0
Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward current transfer ratio hFE A shunt resistor is omitted from the driver Allowing supply with the radial taping
2.50.1
1.00.1 0.8C 0.70.1 0.70.1 0.8C
0.50.1 2.50.2
0.40.1 2.050.2
1:Emitter 2:Collector 3:Base MT3 Type Package
Internal Connection
C
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency
(TC=25C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE* VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCB = 10V, IE = -50mA, f = 200MHz 150 100 80 5 4000 20000 1.8 2.2 V V MHz min typ max 100 100 Unit nA nA V V V
*h
FE
Rank classification
Q R
Rank hFE
4000 to 10000 8000 to 20000
1
Power Transistors
PC -- Ta
Collector to emitter saturation voltage VCE(sat) (V)
2.0 Without heat sink
2SD2220
VCE(sat) -- IC
10 IC/IB=1000
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
10 IC/IB=1000
Collector power dissipation PC (W)
1.6
3
3 TC=-25C 1 25C 0.3 100C
1.2
1
TC=-25C 100C
0.3
0.8
25C
0.1
0.1
0.4
0.03
0.03
0 0 20 40 60 80 100 120 140 160
0.01 0.01
0.03
0.1
0.3
1
3
0.01 0.01
0.03
0.1
0.3
1
3
Ambient temperature Ta (C)
Collector current IC (A)
Collector current IC (A)
hFE -- IC
24 100000
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=10V IE=0 f=1MHz TC=25C
Forward current transfer ratio hFE
20
30000 25C TC=100C -25C
16
10000
12
3000
1000
8
300
4
100 0.01
0 0.03 0.1 0.3 1 3 1 3 10 30 100
Collector current IC (A)
Collector to base voltage VCB (V)
2
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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