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| Rectifier Diodes MA2J115 Silicon epitaxial planar type Unit : mm For small power current rectification I Features * Small S-mini type package, allowing high-density mounting * High reverse voltage VR 0.5 0.1 K A 0.625 2 0.16 - 0.06 + 0.1 1 1.25 0.1 0.7 0.1 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s Symbol VR VRM IO IFRM IFSM Tj Tstg Rating 200 200 200 600 Unit V V mA mA 0.4 0.1 1.7 0.1 2.5 0.2 0.4 0.1 1 Anode 2 Cathode S-Mini Type Package (2-pin) 1 150 -55 to +150 A C C Marking Symbol: 1F I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 200 V IF = 200 mA VR = 0 V, f = 1 MHz 4.5 Conditions Min Typ Max 200 1.2 Unit nA V pF Note) Rated input/output frequency: 3 MHz 0.3 1 MA2J115 IF V F 1 000 100C 25C 100 Rectifier Diodes VF Ta 1.6 1.4 10 100C 100 IR V R Ta = 150C Forward current IF (mA) Forward voltage VF (V) Ta = 150C 10 - 20C 1.2 1.0 IF = 200 mA 0.8 0.6 0.4 0.2 10 mA 3 mA Reverse current IR (nA) 1 1 0.1 25C 0.01 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 0.001 0 40 80 120 160 200 0 40 80 120 160 200 240 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR Ta 100 VR = 200 V 100 V 10 V Ct VR 3 f = 1 MHz Ta = 25C IF(surge) tW 1 000 300 100 30 10 3 1 0.3 This graph shows actual values, not guaranteed values. Ta = 25C IF(surge) tW Non repetitive 10 2 1 0.1 1 0.01 0.001 -40 0 0 40 80 120 160 200 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (nA) 0 40 80 120 160 200 240 0.1 0.03 0.1 0.3 1 3 10 30 60 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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