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| (R) BD239C NPN SILICON POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CER V CEO V EBO IC I CM IB P t ot P t ot T stg Tj Parameter Collector-Emitter Voltage (R BE = 100) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc 25 C Total Dissipation at Tamb 25 C St orage Temperature Max. Operating Junction Temperature o o Value 115 100 5 2 4 0.6 30 2 -65 to 150 150 Uni t V V V A A A W W o o C C April 1999 1/4 BD239C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 4.17 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 100 V V CE = 60 V V EB = 5 V I C = 30 mA IC = 1 A IC = 1 A I C = 0.2 A IC = 1 A I C = 0.2 A I C = 0.2 A IB = 0.2 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V V CE = 10 V f = 1MHz f = 1KHz 40 15 3 20 100 0.7 1.3 Min. Typ . Max. 0.2 0.3 1 Un it mA mA mA V V V V CEO(sus ) Collector-Emitter Sustaining Voltage V CE(sat ) V BE h F E h fe Collector-Emitter Saturation Voltage Base-Emitt er Voltage DC Current Gain Small Signal Current Gain Pulsed: Pulse duration = 300 s, duty cycle 2 % Safe Operating Areas 2/4 BD239C TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 BD239C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4 |
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