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| 2N6782 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N-CHANNEL POWER MOSFET 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. APPLICATIONS * FAST SWITCHING * MOTOR CONTROLS 5.08 (0.200) typ. * POWER SUPPLIES 2.54 (0.100) 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 45 TO39 Pin 1 - Source Pin 2 - Gate Pin 3 Drain and Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDS GR Drain Source Voltage Drain Gate Voltage (RGS = 1MW) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Gate Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Linear Derating Factor Operating and Storage Temperature Range (1/16" from case for 10 secs) 100V 100V 3.5V 2.25A 8V 40V 15W 6W 0.12W/C 0.005W/C -55 to +150C 300C 6/00 ID @Tcase = 25C ID @Tcase = 100C IDM VGS PD@ Tcase = 25C PD@ Tcase = 100C Junction to Case Junction to ambient TJ,Tstg Lead Temperature Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 2N6782 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain - Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSSF IGSSR IDSS ID(on) VDS(on) RDS(on) Gate Body Leakage Forward Gate Body Leakage Reverse Zero Gate Voltage Drain Current On State Drain Current1 Static Drain Source On-State Voltage1 Static Drain Source On-State Resistance1 DYNAMIC CHARACTERISTICS gfs Ciss Coss Crss td(on) tr td(off) tf Forward Transductance 1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current Body Diode Source Current1 (Body Diode) Diode Forward Voltage 1 Reverse Recovery Time THERMAL CHARACTERISTICS VDS 2VDS(ON) IDS = 2.25A VGS = 0 f = 1MHz VDD = 34V RG = 25W ID = 2.25A RL = 15W VDS = 25V 1.0* 60* 40* 10* 3.0* 200* 100* 25* 15* 25* 25* 20* ns pF VGS = 0 VDS = VGS VGS = 20V VGS = -20V VDS = 0.8 Max. VDS = Max. Ratings VGS =0 Ratings VGS =0 TC = 125C VDS 2VDS(ON) VGS = 10V VGS = 10V VGS = 10V ID = 3.5A ID = 2.25A TC = 125C 3.5 2.1* 0.6* 1.08* ID = 0.25mA ID = 0.5A TA = 125C ID = 0.5A TA = 125C 100* 2* 1* 4.0* 4.0* 100* 200* -100* 0.25* 1* mA A V nA V V Test Conditions Min. Typ. Max. Unit W V S (E) (MOSFET switching times are essentially independent of operating temperature.) BODY- DRAIN DIODE RATINGS & CHARACTERISTICS IS ISM VSD trr MOdified MOS POWER symbol showing the intergal / 5 , -3.5* -8 -0.75* 200 -1.5* A A V V P-N junction rectifier. IS = -3.5A TC = 25C IF =IS di / dt = 100A/ms VGS = 0 TJ = 150C RqJC Thermal Resistance Junction - Case RqJPC Thermal Resistance Junction - PC Board Notes 1) Pulse Test: Pulse Width 300ms, d 2% * JEDEC registered Values Free Air Operation 8.33* 170 C\W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 6/00 |
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