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| Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : mm For optical control systems 0.50.1 Features High sensitivity Good collector photo current linearity with respect to optical power input Small size designed for easier mounting to printed circuit board 2.80.2 1.050.1 Type number : Emitter mark (Blue) 10.0 min. 10.0 min. 3.20.3 3.20.3 o1.8 2 1 45 2.20.15 (0.7) 0.15 (0.7) 1.8 2.80.2 1.8 Fast response : tr = 2.5 s (typ.) R0.9 Absolute Maximum Ratings (Ta = 25C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 20 50 -25 to +85 -30 to +100 Unit V V mA mW C C 0.85 0.15 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time *1 *2 Symbol ICEO ICE(L)*3 P tr*2 tf*2 VCE = 10V Conditions VCE = 10V, L = 1000 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100 min 0.8 typ 1 800 14 2.5 3.5 max 100 19.2 Unit nA mA nm deg. s s Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, 50 RL *3 I CE(L) Classifications Class ICE(L) (mA) Q 0.8 to 2.4 R 1.6 to 4.8 S 3.2 to 9.6 T 6.4 to 19.2 0.40.1 1 Phototransistors PNZ1270 PC -- Ta 60 5 ICE(L) -- VCE Ta = 25C T = 2856K L =1000 lx 10 5 ICE(L) -- L ICE(L) (A) VCE = 10V Ta = 25C T = 2856K PC (mW) 50 ICE(L) (mA) 4 10 4 Collector power dissipation 40 Collector photo current Collector photo current 3 30 10 3 2 500 lx 20 10 1 250 lx 100 lx 10 2 0 - 20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10 10 10 2 10 3 10 4 Ambient temperature Ta (C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICEO -- Ta 10 3 VCE = 10V 10 5 ICE(L) -- Ta VCE = 10V T = 2856K 100 Spectral sensitivity characteristics VCE = 10V Ta = 25C ICE(L) (mA) ICEO (nA) 10 2 10 4 S (%) Relative sensitivity 0 40 80 120 80 Dark current 10 Collector photo current 60 40 10 3 1 20 10 -1 - 40 0 40 80 120 10 2 - 40 0 200 400 600 800 1000 1200 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Wavelength (nm) Directivity characteristics 0 100 90 80 70 60 50 40 30 20 10 20 10 2 tr -- ICE(L) VCE = 10V Ta = 25C 10 2 tf -- ICE(L) VCE = 10V Ta = 25C Relative sensitivity S (%) 30 10 10 tr (s) tf (s) RL = 1k 500 1 100 RL = 1k 500 100 40 50 60 70 80 90 Rise time 10 -1 Fall time 1 10 -1 10 -2 10 -2 10 -1 1 10 10 -2 10 -2 10 -1 1 10 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2 |
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