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| TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q q q q q 50 W at 25C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Maximum VCE(sat) of 2.8 V at IC = 6.5 A ICEX(sus) 7 A at rated V(BR)CEO C 2 SOT-93 PACKAGE (TOP VIEW) B 1 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING TIP160 Collector-base voltage (IE = 0) TIP161 TIP162 TIP160 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Peak commutating anti-parallel diode current (IB = 0) (see Note 2) Continuous base current Continuous device dissipation at (or below) 100C case temperature (see Note 3) Continuous device dissipation at (or below) 25C free air temperature (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. TIP161 TIP162 V EBO IC ICM IEM IB Ptot Ptot Tj Tstg TL VCEO VCBO SYMBOL VALUE 320 350 380 320 350 380 5 10 15 10 1 50 3 -65 to +150 -65 to +150 260 V A A A A W W C C C V V UNIT This value applies for tp 10 ms, duty cycle 10%. This value applies to the total collector-terminal current when the collector is at negative potential with respect to the emitter. Derate linearly to 150C case temperature at the rate of 0.4 W/C. Derate linearly to 150C free air temperature at the rate of 24 mW/C. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25C case temperature PARAMETER ICEO Collector-emitter cut-off current Collector-emitter sustaining current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage VCE = 320 V V CE = 350 V V CE = 380 V VCLAMP = V(BR)CEO VEB = 5V IC = 0 IC = 4A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 200 2.8 2.9 2.2 3.5 V V V TEST CONDITIONS IB = 0 IB = 0 IB = 0 TIP160 TIP161 TIP162 7 100 A mA 1 mA MIN TYP MAX UNIT ICEX(sus) IEBO hFE VCE(sat) V BE(sat) VEC VCE = 2.2 V IB = IB = IB = IE = 0.1A 1A 0.1A 10 A IC = 6.5 A IC = 10 A IC = 6.5 A IB = 0 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA CC Junction to case thermal resistance Junction to free air thermal resistance Thermal capacitance of case 1.4 MIN TYP MAX 1 41.7 UNIT C/W C/W J/C resistive-load-switching characteristics at 25C case temperature PARAMETER td tr ts tf TEST CONDITIONS IC = 6.5 A V BE(off) = -5 V IB(on) = 100 mA RL = 5 MIN IB(off) = -100 mA TYP 40 1.5 2.2 2.6 MAX UNIT ns s s s Delay time Rise time Storage time Fall time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 24 V Vz L = 7 mH Driver and Current Limiting Circuit TUT 100 0.22 F 0.2 Figure 1. Functional Test Circuit 16.6 ms 11.6 ms Input Signal 0 IB Base Current 0 IC Collector Current Collector Emitter Voltage 0 Vclamp 0 24 V Figure 2. Functional Test Waveforms 40 V 0.056 7 mH IRF140 BY205-600 V in = 10 V 1 k TUT Adjust for IB V clamp 47 12 V Figure 3. Switching Test Circuit PRODUCT INFORMATION 3 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TC = 125C TC = 25C TC = -30C VCE(sat) - Collector-Emitter Saturation Voltage - V 10000 TCD160AA COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 10 IC / IB = 65 tp = 300 s, duty cycle < 2% TCD160AB hFE - Typical DC Current Gain 1000 1*0 100 VCE = 2.2 V t p = 300 s, duty cycle < 2% 10 0*4 1*0 10 IC - Collector Current - A 40 TC = 125C TC = 25C TC = -30C 0*1 1*0 IC - Collector Current - A 10 Figure 4. Figure 5. COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 4*0 IC / IB = 10 tp = 300 s, duty cycle < 2% TCD160AD BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V IC / IB = 65 t p = 300s, duty cycle < 2% TCP160AC 1*0 1*0 TC = 125C TC = 25C TC = -30C 0*4 1*0 IC - Collector Current - A 10 TC = -30C TC = 25C TC = 125C 0*6 1*0 IC - Collector Current - A 10 Figure 6. Figure 7. PRODUCT INFORMATION 4 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 TC 100 C o SAD160AA IC - Collector Current - A 10 1*0 0.1 DC Operation tp = 150 ms, d = 1% tp = 5 ms, d = 5% tp = 1 ms, d= 5% tp = 0.1 ms, d= 5% 10 0*01 1*0 TIP160 TIP161 TIP162 100 1000 VCE - Collector-Emitter Voltage - V Figure 8. PRODUCT INFORMATION 5 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 o 4,1 4,0 15,2 14,7 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW PRODUCT INFORMATION 6 TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 7 |
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