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| MMBD1501/A / 1503/A / 1504/A / 1505/A Discrete POWER & Signal Technologies MMBD1501/A / 1503/A / 1504/A / 1505/A 3 CONNECTION DIAGRAMS 3 1 11 2 1501 3 3 1503 1 2 NC 3 1 3 2 2 SOT-23 1 MMBD1501 MMBD1503 MMBD1504 MMBD1505 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 1504 A11 A13 A14 A15 1505 1 2 1 2 High Conductance Low Leakage Diode Sourced from Process 1L. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25C unless otherwise noted Parameter Value 180 200 600 700 1.0 2.0 -55 to +150 150 Units V mA mA mA A A C C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max MMBD1501/A/ 1503-1505/A* 350 2.8 357 Units mW mW/C C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 a 1997 Fairchild Semiconductor Corporation MMBD1501/A / 1503/A / 1504/A / 1505/A High Conductance Low Leakage Diode (continued) Electrical Characteristics Symbol BV IR TA = 25C unless otherwise noted Parameter Breakdown Voltage Reverse Current Test Conditions IR = 5.0 A VR = 125 V VR = 125 V, TA = 150C VR = 180 V VR = 180 V, TA = 150C IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 300 mA VR = 0, f = 1.0 MHz Min 200 Max 1.0 3.0 10 5.0 720 830 890 930 1.1 1.15 4.0 Units V nA A nA A mV mV mV mV V V pF VF Forward Voltage 620 720 800 830 0.87 0.9 CO Diode Capacitance Typical Characteristics REVERSE VOLTAGE vs REVERSE CURRENT BV - 3.0 to 100 uA VR - REVERSE VOLTAGE (V) 325 Ta= 25C REVERSE CURRENT vs REVERSE VOLTAGE IR - 130 - 205 Volts IR - REVERSE CURRENT (nA) 3 Ta= 25C 300 2 1 275 0 130 250 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 100 150 170 190 VR - REVERSE VOLTAGE (V) 205 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA V VFF - FORWARD VOLTAGE (mV) FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA V F V F - FORWARD VOLTAGE (mV) 550 500 450 400 350 Ta= 25C 800 750 700 650 600 550 Ta= 25C 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 500 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 MMBD1501/A / 1503/A / 1504/A / 1505/A High Conductance Low Leakage Diode (continued) Typical Characteristics (continued) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA VF - FORWARD VOLTAGE (V) 1.2 Ta= 25C CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V 4 CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 Ta= 25C 1.1 1 0.9 0.8 10 20 30 50 100 200 300 500 IF - FORWARD CURRENT (mA) IF PD - POWER DISSIPATION (mW) Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) 500 I - CURRENT (mA) 400 300 200 100 0 IR -F OR WA RD POWER DERATING CURVE 500 400 DO-35 Pkg CU RR EN T 300 SOT-23 Pkg ST Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA EA D 200 100 0 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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