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| 2SK2828 Silicon N Channel MOS FET High Speed Power Switching ADE-208-514 C (Z) 4th. Edition Feb 1999 Features * * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Avalanche ratings Outline TO-3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2828 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 700 30 12 48 12 175 150 -55 to +150 Unit V V A A A W C C 2 2SK2828 Electrical Characteristics (Ta = 25C) Item Symbol Min 700 30 -- -- 2.0 -- 5.5 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.9 9.0 1850 400 45 35 8 10 25 65 140 55 0.95 2.5 Max -- -- 10 100 3.0 1.2 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF nc nc nc ns ns ns ns V s I F = 12A, VGS = 0 I F = 12A, VGS = 0 diF/ dt =100A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 25V, VDS = 0 VDS = 560 V, VGS = 0 I D = 1mA, VDS = 10V*3 I D = 6A, VGS = 10V*3 I D = 6A, VDS = 10V*3 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V I D = 12A I D = 6A, RL = 5 VGS = 10V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test I GSS I DSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 3 2SK2828 Main Characteristics Power vs. Temperature Derating 200 100 50 Pch (W) Drain Current I D (A) 150 20 10 5 2 1 0.5 0.2 0.1 0 50 100 150 Tc (C) 200 5 Case Temperature Maximum Safe Operation Area 10 0 s 10 PW DC Op era s =1 tio 0m Tc 1m s( 1s s t) Channel Dissipation 100 n( ho 50 Operation in this area is limited by R DS(on) =2 5 C) Ta = 25 C 10 20 50 100 200 500 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 20 10 V 16 I D (A) 8V 6V 5V I D (A) 20 Typical Transfer Characteristics V DS = 10 V Pulse Test 16 -25C 12 4.5 V 12 25C 8 Tc = 75C Drain Current 8 4 VGS = 4 V Pulse Test Drain Current 4 0 10 20 30 Drain to Source Voltage V 40 (V) DS 50 0 2 4 6 Gate to Source Voltage V 8 (V) GS 10 4 2SK2828 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( W) 20 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 VGS = 10, 15V 16 12 I D = 10 A 8 5A 4 0.2 0.1 0.05 1 2 5 10 20 50 Drain Current I D (A) 100 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance R DS(on) ( W) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 4.0 Pulse Test 3.2 Forward Transfer Admittance vs. Drain Current 50 20 10 5 25 C 2 1 0.5 0.2 75 C V DS = 10 V Pulse Test 1 2 10 0.5 5 Drain Current I D (A) 20 Tc = -25 C 2.4 I D = 10 A 1.6 V GS = 10 V 0.8 0 -40 5A 0 40 80 120 160 Case Temperature Tc (C) 5 2SK2828 Body-Drain Diode Reverse Recovery Time 5 Reverse Recovery Time trr (ns) 5000 2000 Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) 2 1 0.5 1000 500 200 100 50 20 10 5 Coss 0.2 0.1 di / dt = 100 A / s V GS = 0, Ta = 25 C 10 20 50 I DR (A) VGS = 0 f = 1 MHz Crss 0.05 0.1 0.2 0.5 1 2 5 Reverse Drain Current 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) ID = 12 A 800 VGS V DD = 100 V 250 V 400 V VDS 16 V GS (V) 1000 20 500 Switching Characteristics Switching Time t (ns) 200 100 tf 50 t d(off) Drain to Source Voltage 600 12 Gate to Source Voltage 400 8 t d(on) 20 10 5 0.1 tr V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.3 1 3 Drain Current 10 30 I D (A) 100 200 V DD = 400 V 250 V 100 V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 0 6 2SK2828 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) 40 30 V GS = 0, -5 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance g s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 q ch - c(t) = g s (t) * q ch - c q ch - c = 0.71 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ho 1s D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 7 2SK2828 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50W V DD = 30 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform 90% 8 2SK2828 Package Dimentions Unit: mm f 3.2 0.2 0.5 typ 16.0 max 5.0 0.3 1.0 typ 5.0 max 1.5 typ 14.9 0.2 2.0 typ 20.1 max 1.6 typ 18.0 0.5 1.4 max 2.0 typ 2.8 typ 1.0 0.2 3.6 typ 0.9 typ 1.0 typ 0.6 0.2 0.3 typ 5.45 0.2 5.45 0.2 Hitachi Code EIAJ JEDEC TO-3P SC-65 -- 9 2SK2828 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 10 |
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