 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI6463BDQ New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.015 @ VGS = -4.5 V -20 0.020 @ VGS = -2.5 V 0.027 @ VGS = -1.8 V ID (A) -7.4 - 6.3 - 5.5 S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8D 7S 6S 5D G * Source Pins 2, 3, 6 and 7 must be tied common. SI6463BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -20 "8 - 7.4 Steady State Unit V -6.2 4.9 -30 A -0.95 1.05 0.67 -55 to 150 W _C ID IDM IS PD TJ, Tstg -5.9 -1.35 1.5 1.0 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72018 S-21782--Rev. A, 07-Oct-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 65 100 46 Maximum 83 120 56 Unit _C/W C/W 1 SI6463BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 70_C VDS -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -7.4 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -6.3 A VGS = -1.8 V, ID = -5.5 A Forward Transconductancea gfs VSD VDS = -15 V, ID = -7.4 A IS = -1.3 A, VGS = 0 V 20 0.011 0.015 0.020 34 -0.64 -1.1 0.015 0.020 0.027 W W S V -0.45 -0.8 "100 -1 -10 V nA mA m A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.3 A, di/dt = 100 A/ms VDD = -10 V, RL = 15 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -5 V, ID = -7.4 A 40 5.2 8 35 40 190 90 75 55 60 300 150 120 ns 60 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 1.5 V 12 18 12 TC = 125_C 6 25_C -55 _C 1.0 1.5 2.0 6 0 0 1 2 3 4 5 0 0.0 0.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72018 S-21782--Rev. A, 07-Oct-02 2 SI6463BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) - On-Resistance ( W ) 5000 Vishay Siliconix Capacitance VGS = 1.8 V 0.018 VGS = 2.5 V VGS = 4.5 V C - Capacitance (pF) 0.024 4000 Ciss 3000 0.012 2000 Coss 0.006 1000 Crss 0.000 0 6 12 18 24 30 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 7.4 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7.4 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 16 24 32 40 1.2 2 1.0 1 0.8 0 0 8 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.06 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.05 0.04 ID = 7.4 A 0.03 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72018 S-21782--Rev. A, 07-Oct-02 www.vishay.com 3 SI6463BDQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 200 Single Pulse Power, Junction-to-Ambient 160 0.2 V GS(th) Variance (V) Power (W) ID = 250 mA 0.0 120 80 -0.2 40 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 1 ms 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 1 Square Wave Pulse Duration (sec) 10- 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72018 S-21782--Rev. A, 07-Oct-02 SI6463BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72018 S-21782--Rev. A, 07-Oct-02 www.vishay.com 5 |
Price & Availability of SI6463BDQ
 |
|||||||||||||||||||||||||||||||
|
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |
