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| PHD16N03T TrenchMOSTM standard level FET Rev. 01 -- 18 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PHD16N03T in SOT428 (D-PAK). 1.2 Features s Fast Switching s TrenchMOSTM technology. 1.3 Applications s DC-to-DC converters s General purpose switch. 1.4 Quick reference data s VDS 30 V s Ptot 32.6 W s ID 13.1 A s RDSon 100 m. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 2 1 Top view 3 MBK091 MBB076 Simplified outline [1] Symbol mb d g s SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package. Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) peak gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 C peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s tp 50 s; pulsed; duty cycle = 25% Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions 25 C Tj 175 C 25 C Tj 175 C; RGS = 20 k Min -55 -55 Max 30 30 20 30 13.1 9.2 52.4 32.6 +175 +175 13.1 52.4 Unit V V V V A A A W C C A A Source-drain diode 9397 750 11672 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 18 August 2003 2 of 12 Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET 120 Pder (%) 80 03aa16 120 Ider (%) 80 03aa24 40 40 0 0 50 100 150 200 Tmb (C) 0 0 50 100 150 200 Tmb (C) P tot P der = ---------------------- x 100% P tot ( 25 C ) ID I der = ------------------- x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 102 03an46 ID (A) Limit RDSon = VDS / ID tp = 10 s 10 100 s DC 1 ms 10 ms 1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pulse; VGS = 10 V. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 11672 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 18 August 2003 3 of 12 Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET 4. Thermal characteristics Table 3: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions SOT428 minimum footprint; vertical in still air; mounted on a PCB SOT404 minimum footprint; vertical in still air; mounted on a PCB Min Typ 75 Max 4.6 Unit K/W K/W thermal resistance from junction to mounting base Figure 4 thermal resistance from junction to ambient Symbol Parameter - 50 - K/W 4.1 Transient thermal impedance 10 03an45 Zth(j-mb) (K/W) = 0.5 1 0.2 0.1 0.05 0.02 single pulse tp T 10-4 10-3 10-2 10-1 t P = tp T 10-1 10-5 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 11672 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 18 August 2003 4 of 12 Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET 5. Characteristics Table 4: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 30 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 13 A; Figure 7 and 8 Tj = 25 C Tj = 175 C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 10 A; VGS = 0 V; Figure 12 VDD = 15 V; RL = 0.6 ; VGS = 10 V; RG = 56 VGS = 0 V; VDS = 30 V; f = 1 MHz; Figure 11 ID = 15 A; VDD = 15 V; VGS = 10 V; Figure 13 5.2 2.6 1.2 180 85 60 6 45 12 23 1 1.2 nC nC nC pF pF pF ns ns ns ns V 72 137 100 190 m m 0.05 10 10 500 100 A A nA 2 1 3 4 4.4 30 27 V V V V V V Conditions Min Typ Max Unit Source-drain diode 9397 750 11672 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 18 August 2003 5 of 12 Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET 20 ID (A) 15 Tj = 25 C 03an47 20 ID (A) 15 VDS > ID x RDSon 03an49 10 V 8V 7V 10 6V 10 5 5V VGS = 4.5 V 0 0 0.5 1 1.5 VDS (V) 2 5 175 C 0 0 2 4 Tj = 25 C 6 8 10 VGS (V) Tj = 25 C Tj = 25 C and 175 C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 150 Tj = 25 C RDSon (m) 100 VGS = 7 V 7.5 V 03an48 2 a 1.5 03aa27 8V 9V 10 V 1 50 0.5 0 0 5 10 15 ID (A) 20 0 -60 0 60 120 Tj (C) 180 Tj = 25 C R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 11672 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 18 August 2003 6 of 12 Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET 5 VGS(th) (V) 4 max 03aa32 10-1 ID (A) 10-2 03aa35 3 typ 10-3 min typ max 2 min 10-4 1 10-5 0 -60 0 60 120 Tj (C) 180 10-6 0 2 4 VGS (V) 6 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 103 03an51 C (pF) Ciss 102 Coss Crss 10 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 11672 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 18 August 2003 7 of 12 Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET 20 IS (A) 15 VGS = 0 V 03an50 10 VGS (V) 8 ID = 15 A Tj = 25 C VDD = 15 V 6 03an52 10 4 5 175 C Tj = 25 C 2 0 0 0.5 1 VSD (V) 1.5 0 0 2 4 QG (nC) 6 Tj = 25 C and 175 C; VGS = 0 V ID = 15 A; VDD = 15 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 9397 750 11672 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 18 August 2003 8 of 12 Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET 6. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E b2 A A1 mounting base A2 E1 D1 D HE L2 2 L L1 1 b1 e e1 b 3 wM A c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1(1) 0.65 0.45 A2 0.93 0.73 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.26 c 0.4 0.2 D 6.22 5.98 D1 min. 4.0 E 6.73 6.47 E1 e e1 HE 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.9 0.5 w 0.2 y max. 0.2 4.81 2.285 4.57 4.45 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 99-09-13 01-12-11 Fig 14. SOT428. 9397 750 11672 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 18 August 2003 9 of 12 Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET 7. Revision history Table 5: Rev Date 01 20030818 Revision history CPCN Description Product data; initial version (9397 750 11672) 9397 750 11672 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 18 August 2003 10 of 12 Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET 8. Data sheet status Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 9. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 11. Trademarks TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V. 10. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 11672 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 18 August 2003 11 of 12 Philips Semiconductors PHD16N03T TrenchMOSTM standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 (c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 18 August 2003 Document order number: 9397 750 11672 |
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