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| Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits K A 0.625 I Features 0.5 0.1 2 0.16 - 0.06 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 20 20 100 300 1 125 -55 to +125 Unit V V mA mA A C C 0.4 0.1 1.7 0.1 2.5 0.2 0.4 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2N Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 2 1 I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V IF = 5 mA IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 25 3.0 Conditions Min Typ Max 20 0.27 0.40 Unit A V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.7 0.1 I Absolute Maximum Ratings Ta = 25C + 0.1 1.25 0.1 * S-mini type 2-pin package * Low forward rise voltage VF (VF < 0.4 V) 0.3 1 MA2ZD14 IF V F 1 10-1 Ta = 125C Schottky Barrier Diodes (SBD) IR V R 10-1 10-2 Forward current IF (A) 10-2 75C 25C 10-4 - 20C Reverse current IR (A) Ta = 125C 10-3 75C 10-3 10-4 10-5 10-5 25C 10-6 0 0.1 0.2 0.3 0.4 0.5 0.6 10-6 0 5 10 15 20 25 30 Forward voltage VF (V) Reverse voltage VR (V) 2 |
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