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| DMBT9922 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * * Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Complement to DMBT9022 SOT-23 A C TOP VIEW B E D G H K J L M E B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data * * * * * Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K2S Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG DMBT9922 -50 -40 -5.0 -100 225 556 -55 to +150 Unit V V V mA mW K/W C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) Cobo fT Min -50 -40 -5.0 3/4 3/4 300 3/4 2.0 Typ. 140 Typ. Max 3/4 3/4 3/4 -500 -500 600 -0.5 3.5 3/4 Unit V V V nA nA 3/4 V pF MHz Test Condition -IC = 50mA, IE = 0 -IC = 1.0mA, IB = 0 -IE = 50mA, IC = 0 VCB = -30V VEB = -4.0V IC = -1.0mA, VCE = -6.0V IC = -50mA, IB = -5.0mA VCB = -12V, f = 1.0MHz, IE = 0 VCE = -12V, IC = -2.0mA, f = 100MHz Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300ms, duty cycle 2%. DS30126 Rev. 2P-5 1 of 1 DMBT9922 |
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