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| NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt FXT655 B C E REFER TO ZTX655 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipationat Tamb =25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE 150 150 5 2 1 1 -55 to +200 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 150 150 5 100 100 0.5 0.5 1.1 1 50 50 20 30 20 MHz pF TYP. MAX. UNIT V V V nA nA V V V V CONDITIONS. IC=100A, IE=0 IC=10mA, IB=0* IE=100A, IC=0 VCB=125V, IE=0 VEB=3V, IC=0 IC=500mA, IB=50mA* IC=1A, IB=200mA* IC=500mA, IB=50mA* IC=500mA, VCE=5V* IC=10mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% 3-49 |
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