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| SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 NOVEMBER 1995 FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA 7 FMMT6517 E C B APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE PARTMARKING DETAIL FMMT6520 517 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb= 25C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICBO IEBO VCE(sat) MIN. 350 350 5 50 50 0.3 0.35 0.5 1.0 0.80 0.85 0.90 2.0 20 30 30 20 15 50 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg MAX. UNIT V V V nA nA V V V V V V V V VALUE 350 350 5 500 330 -55 to +150 CONDITIONS. IC=100A, IE=0 IC=1mA, IB=0* IE=10A, IC=0 VCB=250V, IE=0 VEB=5V, IC=0 IC=10mA, IB=1mA* IC=20mA, IB=2mA* IC=30mA, IB=3mA* IC=50mA, IB=5mA* IC=10mA, IB=1mA* IC=20mA, IB=2mA* IC=30mA, IB=3mA* IC=100mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=50mA, VCE=10V* IC=100mA, VCE=10V* pF MHz VCB=20V, f=1MHz IC=10mA, VCE=20V, f=20MHz UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). VBE(sat) VBE(on) hFE 200 200 6 Output Capacitance Transition Frequency Cobo fT *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 171 |
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