| PART |
Description |
Maker |
| FMDA-10565 |
SiC schottky barrier diodes
|
Sanken
|
| SCS106AG |
SiC Schottky Barrier Diodes
|
Rohm
|
| IDH16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| SCS210AM |
Switching loss reduced, enabling high-speed switching . (2-pin package)
SiC Schottky Barrier Diodes
|
ROHM
ROHM Co., Ltd.
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| IDW40G65C5 IDW10G65C5 IDW12G65C5 IDW16G65C5 IDW20G |
650V SiC thinQ! Generation 5 diodes
650V SiC thinQ!?Generation 5 diodes
|
Infineon Technologies AG
Infineon Technologies A...
|
| SML10SIC03NC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SCS215AG |
SiC Schottky Barrier Diode
|
Rohm
|
