| PART |
Description |
Maker |
| NESG210719-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| MSG43004 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
| HMC548LP309 |
SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz
|
Hittite Microwave Corporation
|
| NESG2021M16-T3 NESG2021M16-T3-A NESG2021M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
| NESG3031M05-T1-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
|
California Eastern Labs
|
| HMC481ST89 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC479ST89 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC482ST89E HMC482ST8910 HITTITEMICROWAVECORP-HMC4 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz
|
Hittite Microwave Corporation
|
