PART |
Description |
Maker |
2SC5580 |
Silicon NPN epitaxial planer type(For high-frequency oscillation / switching)
|
Panasonic Corporation Panasonic Semiconductor
|
2SC5474 |
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
|
Panasonic
|
2SC5473 2SC547 |
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
2SC5472 2SC547 |
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
M57716M 57716M M57716 |
Silicon Bipolar Power Amplifier for 410-430 MHz 13W Digital Mobile Silicon Biporlar Power Amplifier for 410-430MHz 13W Digital Mobile From old datasheet system Silicon Bipolar Power Amplifier for 410-430MHz 13W Digital Mobile
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
BZT52C4V3 BZT52C2V7 BZT52C2V4 BZT52C6V2 BZT52C9V1 |
410 mW Zener Diodes 2.4 to 39 Volts
|
MCC[Micro Commercial Components]
|
MMBZ5222B MMBZ5235B MMBZ5250B MMBZ5259B MMBZ5240B |
410 mW Zener Diode 2.4 to 39 Volts
|
MCC[Micro Commercial Components]
|
MT1198F |
Oscillation Circuit
|
TDK
|
HMC931LP4E HMC931LP4E1103 |
410° Analog Phase Shifter, 8 - 12 GHz
|
Hittite Microwave Corporation
|
NGB15N41CL NGB15N41ACLT4G NGB15N41CLT4G NGD15N41AC |
Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220
|
ON Semiconductor
|
BG12232D1 |
COB with metal frame built-in oscillation
|
Bolymin, Inc
|