| PART |
Description |
Maker |
| SDR1-12 SDR1-12S SDR1-12SMS SDR1-12SMSS SDR1-12SMS |
1 A, 1200 V, SILICON, SIGNAL DIODE
1.0 AMP 1200 - 1600 VOLTS 70 nsec ULTRA FAST RECTIFIER
|
SOLID STATE DEVICES INC
Solid States Devices, Inc
|
| TA202412 TA202414 TA203012 TA203014 TA204012 TA204 |
Phase Control SCR (1200-1400 Amperes Avg 2400-4000 Volts) 第一阶段控制晶闸管（1200-1400安培平均2400-4000伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| MUR10120 MUR10120E MUR10120E_D ON2728 |
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS 10 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
From old datasheet system
|
Micro Commercial Components, Corp.
ON Semi
MOTOROLA[Motorola, Inc]
|
| APT15GN120BDQ1 APT15GN120BDQ1G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-247 [B]; BV(CES) (V): 1200; IC (A): 22; 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
| CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts 600 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM100DY-24H |
Dual IGBTMOD 100 Amperes/1200 Volts 100 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| STTH6012 STTH6012W |
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-247
Ultrafast recovery - 1200 V diode
|
STMicroelectronics
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| AT90SC4816RS |
AT90SC4816RS Summary [Updated 06/03. 2 Pages] Summary of the AT90SC4816RS giving the key features. a brief description and a block diagram.
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (random Number Generator), "out of bounds" detectors, side chann
|
Atmel
|
| C-CWP347-18 T-CWP347-12 T-CWP347-18 W-CWP347-18 C- |
392.5 A, 1800 V, SCR
392.5 A, 1200 V, SCR
47.1 A, 1200 V, SCR
37.68 A, 1200 V, SCR
81.64 A, 800 V, SCR
81.64 A, 1200 V, SCR
|
IXYS, Corp.
IXYS CORP
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| X37120B1N1 |
Single Phase Bridge; Package: SEE_FACTORY; IO/ Leg (A): 80; VR / Leg (V): 1200; IFSM / Leg (A): 1500; 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Microsemi, Corp.
|
