PART |
Description |
Maker |
CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. PNP Silicon Epitaxial Power Transistor
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CDIL[Continental Device India Limited]
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CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y 25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
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Continental Device India, Ltd. CDIL[Continental Device India Limited] Continental Device Indi...
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CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE. PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
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Continental Device India Limited
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BD166 |
Plastic Medium Power Silicon PNP Transistor
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Motorola Inc MOTOROLA[Motorola, Inc]
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MJE350 MJE350G |
Plastic Medium Power PNP Silicon Transistor
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ON Semiconductor
|
MJE371G |
Plastic Medium−Power PNP Silicon Transistor
|
ON Semiconductor
|
BD180 ON0190 |
POWER TRANSISTOR PNP SILICON CASE 77-09 TO-225AA TYPE From old datasheet system Plastic Medium Power Silicon PNP Transistor
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Motorola Inc ON Semiconductor MOTOROLA[Motorola, Inc]
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CJF15033 |
50.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE.
|
Continental Device India Limited
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BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd 20 V, 1 A PNP medium power transistor
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NXP Semiconductors
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CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE. TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五(巴西)总裁| 8A条一(c)| TO - 220AB现有
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Continental Device India Limited Won-Top Electronics Co., Ltd.
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2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62 From old datasheet system Medium Power Transistor (-32A,-1A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
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Rohm Co., Ltd. Rohm CO.,LTD. ROHM[Rohm]
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