| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极
From old datasheet system
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
| SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER
10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| SHD617052BN SHD617052AN SHD617052AP SHD617052BP SH |
HERMETIC SILICON CARBIDE RECTIFIER 5 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD618052AN SHD618052AP SHD618052BP SHD618052P SHD |
HERMETIC SILICON CARBIDE RECTIFIER 5 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| C3M0065100K |
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
|
Wolfspeed
|
| CPMF-1200-S080B |
Silicon Carbide MOSFET
|
CREE
|
| CPMF-1200-S160B |
Silicon Carbide MOSFET
|
CREE
|
| SSR20C100CT |
Schottky Silicon Carbide
|
Solid States Devices, Inc
|
| MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
| C2M1000170D-15 |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| SHDC625052 SHDC625052D SHDC625052N SHDC625052P |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
