| PART |
Description |
Maker |
| D6RB2G140E1AJ |
FBAR/SAW Devices (SAW Duplexers)
|
Taiyo Yuden (U.S.A.), I...
|
| D5DA942M5K2G6 |
FBAR/SAW Devices (SAW Duplexers)
|
Taiyo Yuden (U.S.A.), I...
|
| D6HQ2G655DP01-Q D6HQ2G655DP01-ZA D6HQ2G655DP01-Y D |
FBAR/SAW Devices (FBAR Duplexers)
|
Taiyo Yuden (U.S.A.), I...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| ACMD-7401 |
ACMD-7401 · 5 x 5 mm FBAR Duplexer for US PCS Band
|
Agilent (Hewlett-Packard)
|
| FI168H2593GG-T |
Multilayer Ceramic Devices (High Pass Type)
|
Taiyo Yuden (U.S.A.), I...
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
| MAX6023EBT |
CHIP SCALE DEVICES
3.3-V ABT Octal Transparent D-type Latches With 3-State Outputs 20-CFP -55 to 125 芯片级器
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| TS600-200-RA-B-0.5 |
PolySwitch庐PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| NANOSMDC016F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
