PART |
Description |
Maker |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
STPSC606 STPSC606D STPSC606G-TR |
6 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC 600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
SHD617112BN SHD617112BP SHD617112P SHD617112AN SHD |
HERMETIC SILICON CARBIDE RECTIFIER 10 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
SIDC24D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
GM195 |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
CPMF-1200-S080B |
Silicon Carbide MOSFET
|
CREE
|
MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
C3M0065090J |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
IDM10G120C5-15 |
Silicon Carbide Schottky Diode
|
Infineon Technologies A...
|