| PART |
Description |
Maker |
| ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD
170 MHz in-system prommable high density PLD
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD
CRYSTAL 24.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
High Voltage,High Density Fast Recovery Rectifier(反向电压4000V，温55℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压6000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压12000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压2000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压10000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
| 81080V ISPLSI81080V-60LB272 ISPLSI81080V-90LB492 I |
3.3V In-System Programmable SuperBIG High Density PLD
3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 14.5 ns, PBGA492
3.3V In-System Programmable SuperBIGHigh Density PLD 3.3在系统可编程SuperBIG⑩高密度可编程逻辑器件
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40
High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44
High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40
High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| ISPLSI2064V-100LJ84 ISPLSI2064V-100LJ84I ISPLSI206 |
3.3V High Density Programmable Logic
3.3V High Density Programmable Logic 3.3高密度可编程逻辑
3.3V High Density Programmable Logic EE PLD, 15 ns, PQCC84
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| SET111411 SET111403 SET111412 SET111419 SET111404 |
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?400V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?1000V,娓╁害55???骞冲??存??垫?30A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?150V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴??涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(反向电压1000V,温度55℃时平均整流电流45A,高密大电三相全波桥整流器) 高密度，大电3 -相全波桥式整流器（反向电000V的温5℃时平均整流电流45A条，高密度，大电流，三相全波桥整流器
HIGH CURRENT, 3-PHASE FULL WAVE BRIDGE ASSEMBLY
|
Semtech, Corp.
Semtech Corporation
|
| IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI |
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 10 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 6.5 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 3.3伏高密度SUPERSYNC二窄总线先进先出
Octal bus transceiver/register (3-State) - Description: Transceiver/Register (3-State) ; Fmax: 350 MHz; Logic switching levels: TTL ; Number of pins: 24 ; Output drive capability: -32/ 64 mA ; Propagation delay: 4.4 ns; Voltage: 4.5-5.5 V
|
Integrated Device Technology, Inc.
|
| SCF10000 SCF5000 SCF7500 SCF12500 SCF2500 |
High Voltage,High Density Fast Recovery Rectifier(反向电压2500V，温5℃时平均整流电流0.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压12500V，温5℃时平均整流电流0.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压7500V，温5℃时平均整流电流0.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压10000V，温5℃时平均整流电流0.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压5000V，温5℃时平均整流电流0.5A,高压，高密度，快速恢复整流器)
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Semtech Corporation
|
| ISPLSI5256VE-125LT100I ISPLSI5256VE-100LF256I ISPL |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
EE PLD, 10 ns, PBGA256
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns.
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
