| PART |
Description |
Maker |
| NX7329BB-AA-AZ NX7329BB-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LADER DIODE IN COAXIAL PACKAGE FOR ITDR APPLICATION (25 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7329BB-AA |
1310 nm InGaAsP MQW FP pulsed laser diode for OTDR application (25 mW min). Flat mount flange.
|
NEC
|
| NX7329BB-AA NX7329BB-AA-AZ |
NECs 1310 nm InGaAsP MQW FP PULSED LADER DIODE IN COAXIAL PACKAGE FOR ITDR APPLICATION (25 mW MIN) 邻舍1310纳米InGaAsP多量子阱计划生育脉冲LADER二极管的ITDR应用5毫瓦闵同轴封装）
|
http://
California Eastern Laboratories, Inc.
|
| NX7327BF-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (110 mW MIN)
|
California Eastern Laboratories
http://
|
| NX6301SH NX6301SI NX6301SJ NX6301SK NX6301GK NX630 |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications.
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
NEC
CEL[California Eastern Labs]
|
| NX7363JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
California Eastern Laboratories
|
| NX7363JB-BC NX7363JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
California Eastern Labs
|
| NX7563JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
California Eastern Laboratories
|
| NX6307SK |
1310 nm InGaAsP MQW DFB laser diode for 2.5 Gb/s application.
|
NEC
|
| NX7529BB-AA-AZ NX7529BB-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (20 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7561JB-BC-AZ |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW MIN)
|
California Eastern Laboratories
|
