| PART |
Description |
Maker |
| IRGPC20F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
|
IRF[International Rectifier]
|
| IRGBC20M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)
|
IRF[International Rectifier]
|
| IRGP420U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)
|
IRF[International Rectifier]
|
| IRGPH20S IRGPH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A)
|
IRF[International Rectifier]
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRGPH30S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V @Vge=15V Ic=13A)
INSULATED GATE BIPOLAR TRANSISTOR(VCES=1200V, @VGE=15V, IC=13A)
|
IRF[International Rectifier]
|
| IRGPC50M |
INSULATED GATE BIPOLAR TRANSISTOR(VCES=600V, @VGE=15V, IC=35A)
|
IRF
International Rectifier
|
| IRGBC40S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=31A)
|
IRF[International Rectifier]
|
| EN6387B |
Bipolar Transistor -15V, -1.5A, Low VCE(sat), PNP Single MCPH6
|
ON Semiconductor
|
| IRGPF30F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
|
IRF[International Rectifier]
|
| IRGPC30S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
