| PART |
Description |
Maker |
| RLDH808-1200-5 |
main technical parameters
|
Roithner LaserTechnik G...
|
| MN102H73K MN102H73G MN102H730F MN102H73 MN102H730 |
Microcomputer - 16bit - General Purpose
With main clock operated 58 ns (at 3.0 V to 3.6 V, 34 MHz)
With main clock operated 58 ns (at 3.0 V to 3.6 V 34 MHz)
|
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
|
| SI5484DU-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor
|
| SUD50N06-07L-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| VCO-111TC |
Nominal Operating Parameters
|
RF Micro Devices
|
| VCO-109 |
Nominal Operating Parameters
|
RF Micro Devices
|
| SI6968BEDQRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4496DY-RC SI4496DY |
R - C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| AN1228 |
RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE
|
SGS Thomson Microelectronics
|
| MR18R16228DF0 MR16R1622 MR18R1622DF0 MR16R16224DF0 |
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| IRF7665S2PBF IRF7665S2TR1PBF |
Key parameters optimized for Class-D audio amplifier applications
|
International Rectifier
|
| IRFB4212 IRFB4212PBF |
Key parameters optimized for Class-D audio amplifier applications
Key parameters optimized for Class-D audio amplifier applications
|
Kersemi Electronic Co., Ltd...
Kersemi Electronic Co.,...
|
