PART |
Description |
Maker |
BBY51 Q62702-B631 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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BBY53-03W Q62702-B0825 BBY5303W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管(Hyperabrupt交界调谐二极管频率线性调谐范 12五) Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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BBY26-S1 BBY24 Q62702-B23-S2 BBY24-BBY27 BBY24-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) 硅调谐变容二极管(突变结调谐二极管调谐范20伏) 1 UF 10% 25V X7R (1206) CHIP CAP TR RESISTOR, 1% SMT 0603 From old datasheet system
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SIEMENS A G Siemens Group SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Q62702-B918 BBY57-03W BBY5703W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) From old datasheet system
|
Siemens Group SIEMENS[Siemens Semiconductor Group]
|
Q62702-B915 BBY57-02W BBY5702W |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
|
Siemens Group SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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BBY51-02L BBY51 BBY51-03W BBY51-02W |
Silicon Tuning Diode Varactordiodes - Silicon high Q hyperabrupt tuning diode Varactordiodes - Silicon high Q hyperabrupt dual tuning diode
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INFINEON[Infineon Technologies AG]
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MMVL2101NBSP MMVL2101T1 MMVL2101 MMVL2101T1-D |
Silicon Tuning Diode Silicon Tuning Diode 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
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MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
MMVL109T1 MMVL109T1G |
Tuning Diode SOD323 30V VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE Silicon Epicap Diodes
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ONSEMI[ON Semiconductor]
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MMVL409T1G MMVL409T106 MMVL409T1 |
Silicon Tuning Diode(调谐二极 VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
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ONSEMI[ON Semiconductor]
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