| PART |
Description |
Maker |
| MIMMD90A160DK |
1600V 90A Rectifier Diode Module RoHS Compliant
|
Micross Components
|
| MIMMK90A160B |
1600V 90A thyristor Module RoHS Compliant
|
Micross Components
|
| 8EWS08STRL 8EWS08STRR 8EWS08S 8EWS10S 8EWS12S 8EWS |
SURFACE MOUNTABLE INPUT RECTIFIER DIODE
8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-252AA
800V 8A Std. Recovery Diode in a D-Pakpackage
1600V 8A Std. Recovery Diode in a D-Pakpackage
|
VISHAY SEMICONDUCTORS
IRF[International Rectifier]
|
| IRKD166 IRKC166 IRKC196-04 IRKC196-08 IRKC196-12 I |
1400V Single Diode in a INT-A-Pak package
1200V Single Diode in a INT-A-Pak package
1200V Doubler in a INT-A-Pak package
1600V Common Anode in a INT-A-Pak package
1600V Single Diode in a INT-A-Pak package
1600V Doubler in a INT-A-Pak package
1600V Common Cathode in a INT-A-Pak package
STANDARD RECOVERY DIODES
800V Doubler in a INT-A-Pak package
800V Single Diode in a INT-A-Pak package
1200V Common Anode in a INT-A-Pak package
800V Common Cathode in a INT-A-Pak package
1400V Doubler in a INT-A-Pak package
1400V Common Anode in a INT-A-Pak package 1400V共阳极的相依 Pak封装
1400V Common Cathode in a INT-A-Pak package 1400V共阴极的相依 Pak封装
NEW INT-A-pak Power Modules 新国甲柏电源模块
1200V Common Cathode in a INT-A-Pak package 1200伏共阴极的相依甲- Pak封装
800V Common Anode in a INT-A-Pak package 800V的共阳极的相依甲- Pak封装
230 A, 1200 V, SILICON, RECTIFIER DIODE
|
IRF[International Rectifier]
International Rectifier, Corp.
VISHAY SEMICONDUCTORS
|
| UDZS4.7B UDZS8.2B07 |
4.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE UMD2, SC-90A, 2 PIN
Zener diode
|
Micro Commercial Components, Corp.
Rohm
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE
16 A, 800 V, SILICON, RECTIFIER DIODE
16 A, 400 V, SILICON, RECTIFIER DIODE
25 A, 200 V, SILICON, RECTIFIER DIODE
25 A, 1000 V, SILICON, RECTIFIER DIODE
16 A, 1200 V, SILICON, RECTIFIER DIODE
16 A, 100 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
| IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F370 |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRKC61/20 IRKC61-20 IRKD270-22-NPBF IRKD270-24NPBF |
60 A, 2000 V, SILICON, RECTIFIER DIODE
270 A, 2200 V, SILICON, RECTIFIER DIODE
270 A, 2400 V, SILICON, RECTIFIER DIODE
DIODE 320 A, 600 V, SILICON, RECTIFIER DIODE, POWER, MAGN-A-PAK-3, Rectifier Diode
|
VISHAY SEMICONDUCTORS
|
| 6RI100P-160 |
Diode Module 1600V / 100A
|
Fuji Electric
|
| MIMMD250F160X |
1600V 250A Rectifier Module RoHS Compliant
|
Micross Components
|
| PT10116 PT10112 |
DIODE MODULE 100A/1200V/1600V
|
NIEC[Nihon Inter Electronics Corporation]
|
|
