| PART |
Description |
Maker |
| SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道，低Qg，快速开WFET，超低开关损
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI7390DP SI7390DP-T1-E3 |
9 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel 30-V (D-S) Fast Switching WFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| FDS6298 |
30V N-Channel Fast Switching PowerTrench MOSFET
30V N-Channel Fast Switching PowerTrench® MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| SIDC07D60F6 SIDC07D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| SI7108DN-T1-E3 |
N-Channel 20-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7806BDN-T1-E3 |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Intertechnology,Inc.
|
| SI7446BDP |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay
|
| SI4884DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
