| PART |
Description |
Maker |
| IDW10G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| IDW30G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| GVT73128A8 73128A8S |
REVOLUTIONARY PINOUT 128K X 8
From old datasheet system
|
Galvantech
|
| GVT7364A16 7364A16S |
REVOLUTIONARY PINOUT 64K X 16
From old datasheet system
|
Galvantech
|
| XA3S200-4TQG144I XA3S400-4FGG456I XA3S200-4VQG100I |
XA3S200-4TQG144I FPGA, 480 CLBS, 200000 GATES, PQFP144
XA3S400-4FGG456I FPGA, 896 CLBS, 400000 GATES, PBGA456
AUTOMOTIVE FPGA, 480 CLBS, 200000 GATES, PQFP100
FPGA, 192 CLBS, 50000 GATES, PQFP100
Revolutionary 90-nanometer process technology
Revolutionary 90-nanometer process technology
|
Xilinx, Inc.
XILINX INC
|
| IS63C1024 |
128K x 8 High Speed CMOS Static RAM 5V Revolutionary Pinout
|
Integrated Silicon Solution
|
| SPP06N60C3 SPP06N60C307 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPA11N80C3 SPA11N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| EDI8F82046C |
2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout(2Mx8 CMOS静态RAM模块)
|
White Electronic Designs Corporation
|
| SPP20N60CFD09 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
