| PART |
Description |
Maker |
| FGA15S125P |
1250 V, 15 A Shorted-anode IGBT
|
Fairchild Semiconductor
|
| FGA15S125P |
1250V, 15A, Shorted-anode IGBT
|
Fairchild Semiconductor
|
| CM50TF-28H |
IGBT Modules:1400V
|
Mitsubishi Electric Corporation
|
| CM200DY-28H |
IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM75DY-28H |
HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1400V
|
Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| 6MBI20GS-060 |
IGBT(600V 20A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 6MBI20GS-060 |
IGBT(600V 20A)
|
Fuji Electric
|
| 6MBI20F-060 |
IGBT(600V 20A)
|
Fuji Electric
|
| FGB20N60SF |
600V, 20A, Field Stop IGBT
|
Fairchild Semiconductor
|
