| PART |
Description |
Maker |
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| PHB101NQ04T PHP101NQ04T |
N-channel Trenchmos (tm) standard level FET
N-channel TrenchMOS standard level FET 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS standard level FET
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| FJZ594JC FJZ594J FJZ594JB FJZ594JBTF FJZ594JTF FJZ |
Silicon N-Channel Junction FET
Si N-channel Junction FET 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| SSW1N50B SSI1N50B SSW1N50BTM SSI1N50BTU |
500V N-Channel B-FET / Substitute of SSI1N50A
500V N-Channel B-FET / Substitute of SSW1N50A
520V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FJX597JH FJX597JHTF |
Si N-channel Junction FET
Capacitor Microphone Applications
Silicon N-Channel Junction FET
|
FAIRCHILD[Fairchild Semiconductor]
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| 2SJ449 2SJ449JM |
Pch vertical DMOS FET MP-45F
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
