PART |
Description |
Maker |
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G22LS-180RN |
Power LDMOS Transistor
|
Philips Semiconductors
|
L88016-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF7G22L-130N |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G22L-100P |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G20L-160P |
Power LDMOS transistor
|
Philips Semiconductors
|
BLP15M7160P |
Power LDMOS transistor
|
NXP Semiconductors
|