PART |
Description |
Maker |
IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
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SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
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STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
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SSU50N10 SSU50N10-15 |
54A , 100V , RDS(ON) 22m N-Ch Enhancement Mode Power MOSFET N-Ch Enhancement Mode Power MOSFET
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SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
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STP60NE06-16FP STP60NE06-16 5474 STP60NE06-16FI |
N-CHANNEL Power MOSFET TRANSISTOR MOSFET 晶体管MOSFET N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET -通道增强型单特征尺寸功率MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE] ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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ST Microelectronics STMicroelectronics N.V.
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STP55NE06L STP55NE06LFP 5565 P55NE06L |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE] ” POWER MOSFET N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Search --To STP55NE06L
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
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Advanced Power Technology Ltd.
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APL501P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12 OHM
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Advanced Power Technolo... Advanced Power Technology
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APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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Advanced Power Technology, Ltd.
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APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 500V 46A 0.100 Ohm
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Advanced Power Technology, Ltd.
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NTMSD3P303R2 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package(双P通道,增强模式,SO-8封装的功率MOSFET与肖特基二极
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ON Semiconductor
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