| PART |
Description |
Maker |
| STB28NM50N |
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK package
|
ST Microelectronics
|
| STI14NM50N STP14NM50N STF14NM50N STD14NM50N STB14N |
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh II Power MOSFET in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh II Power MOSFET in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh?/a> II Power MOSFET in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh?II Power MOSFET in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
|
STMicroelectronics
|
| SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| P5KE60 P5KE60A P5KE64 P5KE64A P5KE65 P5KE65A P5KE3 |
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
|
Microsemi, Corp.
Micro Commercial Components, Corp.
MICROSEMI[Microsemi Corporation]
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package
Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics
STMicroelectronics
|
| P5KE20 P5KE40 P5KE40A P5KE7.0 P5KE7.0A P5KE100A P5 |
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| SA70A SA15A SA90A SA40A SA150CA SA6.5CA SA5.0CA SA |
500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS
55SS Series Series Unipolar Hall-Effect Digital Position Sensor
Ceramic Multilayer Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:1206; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System
; Capacitance:2200pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:1000V; Dielectric Characteristic:X7R; Package/Case:1206; Series:VJ
RES 412 OHM 1/10W .5% 0805 SMD
SENSOR DI-MAG SPEED
500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
Electronics Industry Public Company Limited
Micro Commercial Compon...
|
| STP9N65M2 STD9N65M2 STF9N65M2 |
Extremely low gate charge
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| PPF440J |
N Channel MOSFET; Package: TO-257; ID (A): 4.4; RDS(on) (Ohms): 0.85; PD (W): 60; BVDSS (V): 500; Rq: 2.1; 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
|
Microsemi, Corp.
|
| STU4N62K3 STP4N62K3 STI4N62K3 STF4N62K3 STFI4N62K3 |
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAK package
N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| 2SC3356 |
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
|
TY Semiconductor Co., Ltd
|
