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2SC3583 - NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz NPN Silicon Epitaxial Transistor

2SC3583_7985344.PDF Datasheet

 
Part No. 2SC3583
Description NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz
NPN Silicon Epitaxial Transistor

File Size 94.96K  /  1 Page  

Maker

TY Semiconductor Co., L...
TY Semicondutor



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Part: 2SC3583
Maker: NEC
Pack: SOT23
Stock: Reserved
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 Full text search : NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz NPN Silicon Epitaxial Transistor


 Related Part Number
PART Description Maker
2SC3583 NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz
NPN Silicon Epitaxial Transistor
TY Semiconductor Co., L...
TY Semicondutor
S3921 S3921-512Q S3921-128Q NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
Hamamatsu Photonics
S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
Spansion Inc.
Spansion, Inc.
SPANSION LLC
S4402 MOSFET, Switching; VDSS (V): 600; ID (A): 16; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.475; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Hamamatsu Photonics
S7878 MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V
Hamamatsu Photonics
IRFP23N50LPBF 23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
International Rectifier
STL40C30H3LL N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
ST Microelectronics
KDB3652 rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V
TY Semiconductor Co., L...
KDD2572 rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V
TY Semiconductor Co., Ltd
MTSM5015-G MTSM3015-HR MTSM4015-Y MTSM3415-HRY MTS Surface mount LED lamp. Emitting color yellow/green. Resin color water clear. Luminous intensity(mcd) 3.0(typ) @20mA. Peak emission waveiength(typ) 585/565 nm.
IC REF PREC 2.5V MICROPWR SOT23 采用SOT - 23表面贴装发光二极
SOT-23 Surface Mount LED Lamps
Marktech SOT−23 SMT LEDs
Surface mount LED lamp. Emitting color hi-eff red/green. Resin color water clear. Luminous intensity(mcd) 3.0(typ) @20mA. Peak emission waveiength(typ) 635/565 nm.
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
http://
HM628512BI HM628512BLFPI-7 HM628512BLFPI-8 HM62851 4 M SRAM (512-kword x 8-bit)
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Octal Buffers And Line Drivers With 3-State Outputs 20-CDIP -55 to 125
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R<sub>1</sub> (typ): 47.0 kOhm; R<sub>2</sub>: 47.0 k?; h<sub>FE</sub> (min): 70.0; V<sub>i (on)</sub> (min): 1.0 2mA / 0.3V;
http://
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
 
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