| PART |
Description |
Maker |
| MMFT107T1D MMFT107T3 MMFT107T1 MMFT107 MMFT107T1-D |
Power MOSFET 250 mA, 200 Volts N-Channel SOT-223
Power MOSFET 250 mA / 200 Volts
Power MOSFET 250 mA, 200 Volts 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
ONSEMI[ON Semiconductor]
|
| 3404.2420.XX 3404.2417.XX 3404.2412.XX 3404.2413.X |
Surface Mount Fuse with Clip, 11.1 x 3.8 mm, Time-Lag T, UMZ 250 = UMT 250 (Au) UMC 250
|
Schurter Inc.
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| FQP16N25C FQPF16N25C |
250V N-Channel MOSFET 15.6 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2N7288H 2N7288R 2N7288D FN3609 |
Radiation Hardened N-Channel Power MOSFETs 9 A, 250 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
|
ON Semiconductor
INTERSIL[Intersil Corporation]
|
| FQI9N25 FQB9N25 FQB9N25TM |
250V N-Channel QFET
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOSFET) 9.4 A, 250 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| SI7802DN06 |
N-Channel 250-V (D-S) MOSFET
|
Vishay Siliconix
|
| IRFS644BFP001 |
250V N-Channel B-FET / Substitute of IRFS644 & IRFS644A; ; No of Pins: 3; Container: Rail 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK1818-MR 2SK1818 |
N-CHANNEL ENHANCEMENT TYPE MOSFET 20 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
|
