| PART |
Description |
Maker |
| PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| IRFF430 FN1894 |
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET 2.75 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2.75A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET
From old datasheet system
|
Intersil, Corp.
Intersil Corporation
|
| 2SK601 2SK0601 |
Silicon N-Channel MOS FET 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp.
Panasonic Semiconductor
|
| 2SK2874-01L 2SK2874-01S 2SK2874 |
N-channel MOS-FET 6 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IXTN36N50 |
N-Channel Enhancement Mode 36 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
IXYS Corporation
|
| TC1550TG-G |
N- and P-Channel Enhancement-Mode Dual MOSFET 350 A, 500 V, 60 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Supertex, Inc.
|
| VN0550N3-G |
N-Channel Enhancement-Mode Vertical DMOS FETs 50 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Supertex, Inc.
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| IXTH30N50 |
MegaMOS FET 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Discrete MOSFETs: Standard N-channel Types
|
IXYS, Corp.
IXYS Corporation
|
| FQNL2N50BBU |
500V N-Channel QFET; Package: TO-92L; No of Pins: 3; Container: Bulk 0.35 A, 500 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
|
