PART |
Description |
Maker |
IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM 2M X 8 EDO DRAM, 60 ns, PDSO28 2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp. INTEGRATED SILICON SOLUTION INC
|
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
|
http:// SIEMENS AG
|
Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http:// SIEMENS A G SIEMENS AG
|
HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh 1M X 16 EDO DRAM, 50 ns, PDSO44 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Hitachi,Ltd.
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 4M x 16 Bit 8k EDO DRAM 4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM 2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics International Business Machines, Corp.
|
HM5165405F HM5164405F |
64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
|
Hitachi,Ltd.
|
IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
AS4C256K16E0-30JC AS4C256K16E0-35JC |
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 30 ns, PDSO40 5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 35 ns, PDSO40 5V 256Kx16 CMOS DRAM (EDO) 5V56Kx16的CMOS的DRAM(江户)
|
Alliance Semiconductor, Corp.
|