PART |
Description |
Maker |
SIDC07D60F6 SIDC07D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
1N4933G 1N4934G 1N4935G 1N4936G 1N4937G |
Fast Recovery Pack: DO-41 GLASS PASSIVATED JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A
|
Gulf Semiconductor
|
RGPB50J |
Fast Recovery Pack: G3 SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 600V CURRENT: 5.0A
|
Gulf Semiconductor
|
UID4N60 |
N-Ch 600V Fast Switching MOSFETs
|
Unitpower Technology Limited
|
SIDC07D60AF6 SIDC07D60AF610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
STGW30NC60W GP30NC60W GW30NC60W STGP30NC60W -GW30N |
N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN Diodes Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay Beyschlag
|
AP2302AGN-HF |
Advanced Power MOSFE
|
TY Semiconductor Co., Ltd
|
IKB15N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
ES1A ES1B ES1C ES1D ES1G ES1J |
Super Fast Recovery Pack: SMA SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE拢潞50 TO 600V CURRENT拢潞 1.0A SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT 1.0A SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT?1.0A
|
Gulf Semiconductor
|