| PART |
Description |
Maker |
| AO3414 KO3414 |
VDS (V) = 20V ID= 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V)
|
TY Semiconductor Co., Ltd
|
| KX020N06 |
VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V)
|
TY Semiconductor Co., L...
|
| KX7N10L |
VDS (V) = 100V RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A
|
TY Semiconductor Co., Ltd
|
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| AD781 AD781AN AD781JN AD781SQ AD781SQ/883B |
ECONOLINE: REC2.2-S_DRW(Z)/H* - 2.2W DIP Package- 1kVDC Isolation- Regulated Output- 4.5-9V, 9-18V, 18-36V, 36-72V Wide Input Range 2 : 1- UL94V-0
Complete 700 ns Sample-and-Hold Amplifier
High speed, monolithic SHA with a max acquisition time for 700 ns to 0.01% over temperature.
|
Analog Devices, Inc.
AD[Analog Devices]
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3 |
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L PDIP, EPAD Enabled
|
http://
ICE Components, Inc.
ICE COMPONENTS INC
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| ZB4CS-700-10W |
Power wer Splitter/Combiner 4 Way-0° 400 to 700 MHz
Power wer Splitter/Combiner 4 Way-0∑ 400 to 700 MHz
Power wer Splitter/Combiner 4 Way-0 400 to 700 MHz
Power wer Splitter/Combiner 4 Way-0400 to 700 MHz 400 MHz - 700 MHz RF/MICROWAVE COMBINER, 0.8 dB INSERTION LOSS
|
MINI[Mini-Circuits]
|
| BUZ32 BUZ32SMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
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