| PART |
Description |
Maker |
| PMV185XN |
30 V, single N-channel Trench MOSFET Very fast switching Low RDSon
|
TY Semiconductor Co., Ltd
|
| AM2321P |
Low rDS(on) trench technology Low thermal impedance
|
TY Semiconductor Co., Ltd
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| SIGC42T170R3G08 |
1700V Trench Field Stop technology low turn-off losses short tail current
|
Infineon Technologies AG
|
| IKP15N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON
|
| IKW50N60T Q67040S4718 |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
| KDW2503N |
5.5 A, 20 V. RDS(ON) = 0.021 Fast switching speed High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| NX2301P |
20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., L...
|
| V23990-P823-F-P2-14 V23990-P823-F-PM |
Trench Fieldstop IGBT3 Technology
Compact and Low Inductance Design
|
Vincotech
|
