| PART |
Description |
Maker |
| BB501M BB501MAS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB101CAU-TL-E BB101C |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB302MBW-TL-E BB302M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB301MAW-TL-E BB301M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB504C |
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1012MMTL-H TBB101211 |
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB505M |
Build in Biasing Circuit MOS FET IC
|
Renesas Technology
|
| BB501M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB505M BB505MES |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BB503C BB503 BB5.3 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
