| PART |
Description |
Maker |
| HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
|
Infineon Technologies AG
|
| V59C1256804QALP19E V59C1256808QALP19E V59C1G01164Q |
32M X 8 DDR DRAM, BGA68
64M X 16 DDR DRAM, BGA92
|
PROMOS TECHNOLOGIES INC
|
| V59C1512164QDLJ25H V59C1512404QDLJ25AI |
32M X 16 DDR DRAM, PBGA84
128M X 4 DDR DRAM, PBGA60
|
PROMOS TECHNOLOGIES INC
|
| HY5DU12822DTP-D43 HY5DU12822DLTP-D43 HY5DU12822DLT |
32M X 16 DDR DRAM, 0.75 ns, PDSO66
64M X 8 DDR DRAM, 0.75 ns, PDSO66
512Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
| K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM
32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
| MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15 |
64M X 4 DDR DRAM, 1.5 ns, PBGA78
32M X 8 DDR DRAM, 1.87 ns, PBGA78
32M X 8 DDR DRAM, 1.5 ns, PBGA78
|
|
| EDD5108ADTA-6BLI EDD5116ADTA-6BLI EDD5116ADTA-7ALI |
32M X 16 DDR DRAM, 0.75 ns, PDSO66
512M bits DDR SDRAM WTR (Wide Temperature Range)
|
ELPIDA MEMORY INC
|
| M312L3223CT0 M312L3223CT0-LB3 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
M312L3223CT0 DDR SDRAM 184pin DIMM Data Sheet
|
Samsung Electronic
|
| HY5PS121621CFP-C4 HY5PS12821CFP-C4 HY5PS121621CFP- |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, 0.45 ns, PBGA84 ROHS COMPLIANT, FBGA-84
32M X 16 DDR DRAM, 0.5 ns, PBGA84 ROHS COMPLIANT, FBGA-84
|
Hynix Semiconductor, Inc.
|
| W9751G6JB-25I W9751G6JB-18 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
32M X 16 DDR DRAM, 0.35 ns, PBGA84
|
WINBOND ELECTRONICS CORP
|
| HY5DU56822ELF-J |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
|
