| PART |
Description |
Maker |
| STW20N95K5 STP20N95K5 STB20N95K5 |
N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH 5?Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
|
STMicroelectronics
|
| STP7N95K3 STW7N95K3 |
N-channel 950 V, 1.1 Ohm, 7.2 A, TO-247, Zener-protected SuperMESH3; Power MOSFET
N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| BSP205-TAPE-13 BSP205-TAPE-7 |
0.275 A, 60 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| STW25N95K3 |
N-channel 950 V, 0.32 Ohm, 22 A, TO-247 SuperMESH3(TM) Power MOSFET
|
ST Microelectronics
|
| STU6N95K5 |
N-channel 950 V, 1 Ohm typ., 9 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| STF6N95K5 STP6N95K5 STW6N95K5 |
N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK
N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH?5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK
|
STMicroelectronics
|
| SFH4515 SFH4510 Q62702-P1798 Q62702-P1821 |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm
GaAs-IR-Lumineszenzdioden (950 nm) GaAs Infrared Emitters (950 nm)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
红外LED
|
| ZAPD-1750 |
Power Splitter/Combiner 2 Way-0 50Ω 950 to 1750 MHz
Power Splitter/Combiner 2 Way-0 50惟 950 to 1750 MHz
Power Splitter/Combiner 2 Way-0 50ヘ 950 to 1750 MHz
|
Mini-Circuits
|
| LN62S |
3 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
PANASONIC CORP
|
| TSUS52007 TSUS520 TSUS5200 TSUS5201 TSUS5202 |
Infrared Emitting Diode, 950 nm, GaAs
|
Vishay Siliconix
|
| GL514 GL514A |
4.7 mm, 1 ELEMENT, INFRARED LED, 950 nm TO-18, 2 PIN
|
Sharp Electronics, Corp.
Sharp, Corp.
|
|
