| PART |
Description |
Maker |
| IRFB20STRRPBF IRFB20SPBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| IPW90R340C3 |
15 A, 900 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| STP3NB90FP |
N-CHANNEL 900 V - 4 OHM - 3.5 A - TO-220/TO-220FP POWERMESH MOSFET
|
ST Microelectronics
|
| TMP93PW44A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93CS41D TMP93CS40D TMP93CS41 TMP93CS40 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93PW76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93PW32 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| IXFH16N90 |
HiPerFET Power MOSFETs 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
| 2SK1943-01 |
OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IXFX52N30Q IXFX16N90Q |
52 A, 300 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 900 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
|
